PBSS305NX,115 NXP Semiconductors, PBSS305NX,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS305NX,115
• Description: TRANS NPN 80V 4.6A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS305NX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 4.6A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 240mV @ 230mA, 4.6A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 110MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 4.6 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 110 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4177-2; 934059012115; PBSS305NX T/R; PBSS305NX T/R

NXP Semiconductors
PBSS305NX_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
1.2
0.8
0.4
0
0
10
10
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= 2 V
= 2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
10
10
2
2
10
10
006aaa621
3
006aaa622
3
I
I
C
C
(mA)
(mA)
Rev. 02 — 8 December 2009
10
10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
1.2
0.8
0.4
14
12
10
8
6
4
2
0
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
80 V, 4.6 A NPN low V
−1
C
amb
amb
amb
amb
/I
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
1
1
(1)
(2)
(3)
10
2
PBSS305NX
10
3
2
CEsat
I
B
© NXP B.V. 2009. All rights reserved.
10
(mA) = 300
(BISS) transistor
4
006aaa627
006aaa625
3
270
210
150
V
I
C
CE
(mA)
240
180
120
(V)
90
60
30
10
5
4
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