BUL45D2G ON Semiconductor, BUL45D2G Datasheet - Page 10

• Manufacturer Part Number: BUL45D2G
• Description: TRANS NPN 5A 700V 75W TO220AB
• Manufacturer: ON Semiconductor

Specifications of BUL45D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 22
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BUL45D2GOS

a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 28 is
based on T
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
There are two limitations on the power handling ability of
0.01
0.1
1
0.01
C
0.05
0.02
SINGLE PULSE
0.5
0.2
0.1
= 25°C; T
J(pk)
is variable depending on power
0.1
Figure 31. Typical Thermal Response (Z
0.8
0.6
0.4
0.2
1
0
C
20
> 25°C. Second
TYPICAL THERMAL RESPONSE
TYPICAL CHARACTERISTICS
Figure 30. Forward Bias Power Derating
40
THERMAL DERATING
C
http://onsemi.com
−V
1
CE
60
T
C
, CASE TEMPERATURE (°C)
t, TIME (ms)
10
80
P
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
(pk)
T
DUTY CYCLE, D = t
J(pk)
100
t
1
SECOND BREAKDOWN
may be calculated from the data in Figure 31. At any
t
2
10
qJC
DERATING
120
(t)) for BUL45D2
1
/t
2
140
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
qJC
(t) = r(t) R
= 2.5°C/W MAX
160
- T
C
100
= P
qJC
(pk)
1
R
qJC
(t)
1000