BUL45D2G ON Semiconductor, BUL45D2G Datasheet - Page 7

• Manufacturer Part Number: BUL45D2G
• Description: TRANS NPN 5A 700V 75W TO220AB
• Manufacturer: ON Semiconductor

Specifications of BUL45D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 22
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BUL45D2GOS

1500
1000
3000
2000
1000
500
450
350
250
150
50
0
0
0.5
2
0
I
I
V
V
L
B
Boff
I
V
V
L
C
CC
Z
Boff
= 50 mA
C
CC
Z
= 300 V
= 200 mH
I
= 300 V
= 200 mH
= I
B
= 15 V
4
= I
Figure 23. Inductive Storage Time, t
= 15 V
= 100 mA
I
1
Bon
B
Bon
= 200 mA
Figure 19. Inductive Switching,
Figure 21. Inductive Fall Time
I
6
B
I
I
1
C
C
= 500 mA
, COLLECTOR CURRENT (AMPS)
1.5
, COLLECTOR CURRENT (AMPS)
8
h
t
c
FE
@ I
I
, FORCED GAIN
B
2
10
T
T
= 1 A
J
J
T
T
C
= 125°C
= 25°C
I
J
J
B1
2
/I
= 125°C
= 25°C
B
= I
12
2.5
= 10
B2
TYPICAL SWITCHING CHARACTERISTICS
14
3
3
16
I
V
V
L
Bon
C
CC
Z
= 300 V
= 200 mH
I
C
= I
= 15 V
3.5
= 2 A
I
Boff
si
http://onsemi.com
C
18
= 1 A
20
4
4
7
1400
1200
1000
800
600
400
200
360
340
320
300
5
4
3
2
0
2
0
0
I
C
= 2 A
I
V
V
L
Bon
C
dI/dt = 10 A/ms
T
CC
Z
4
C
= 300 V
= 200 mH
Figure 24. Forward Recovery Time t
Figure 22. Inductive Crossover Time
= I
= 25°C
= 15 V
Figure 20. Inductive Storage Time
Boff
T
T
6
0.5
J
J
5
= 125°C
= 25°C
I
F
, FORWARD CURRENT (AMP)
8
h
h
FE
FE
, FORCED GAIN
, FORCED GAIN
I
C
10
= 1 A
10
1
T
T
12
J
J
= 125°C
= 25°C
14
I
V
V
L
15
Bon
1.5
C
CC
Z
16
= 300 V
= 200 mH
= I
= 15 V
I
I
C
C
Boff
= 2 A
= 1 A
18
fr
20
20
2