BUL45D2G ON Semiconductor, BUL45D2G Datasheet - Page 9

• Manufacturer Part Number: BUL45D2G
• Description: TRANS NPN 5A 700V 75W TO220AB
• Manufacturer: ON Semiconductor

Specifications of BUL45D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 22
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BUL45D2GOS

COMMON
+15 V
+10 V
-V
off
0.01
100
0.1
10
1
1 mF
10
Figure 28. Forward Bias Safe Operating Area
MPF930
50
W
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
150 W
3 W
500 mF
MPF930
100 W
3 W
DC
100
150 W
3 W
5 ms
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
MTP8P10
MJE210
MUR105
1 ms
10 ms
TYPICAL CHARACTERISTICS
MTP12N10
MTP8P10
1 ms
http://onsemi.com
1000
R
R
B2
B1
9
A
1 mF
I
out
100 mF
6
5
4
3
2
1
0
200
V
L = 10 mH
R
V
I
C(pk)
(BR)CEO(sus)
B2
CC
Figure 29. Reverse Bias Safe Operating Area
= ∞
= 20 Volts
= 100 mA
V
CE
I
B
V
300
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
I
B
1
400
Inductive Switching
L = 200 mH
R
V
R
desired I
V
CC
B2
B1
CE
I
B
= 0
selected for
= 15 Volts
PEAK
2
0 V
500
B1
-1.5 V
600
I
C
- 5 V
PEAK
T
GAIN ≥ 5
L
C
C
RBSOA
L = 500 mH
R
V
R
desired I
= 2 mH
CC
≤ 125°C
B2
B1
700
= 0
selected for
= 15 Volts
B1
800