BUL45D2G ON Semiconductor, BUL45D2G Datasheet - Page 4

• Manufacturer Part Number: BUL45D2G
• Description: TRANS NPN 5A 700V 75W TO220AB
• Manufacturer: ON Semiconductor

Specifications of BUL45D2G

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 400mA, 2A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10 @ 2A, 1V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 12 V
• Maximum Dc Collector Current: 5 A
• Power Dissipation: 75 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 5 A
• Dc Collector/base Gain Hfe Min: 22
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BUL45D2GOS

100
0.1
80
60
40
20
10
0
4
3
2
1
0
1
0.001
0.001
0.001
Figure 5. Collector−Emitter Saturation Voltage
V
I
CE
C
T
/I
I
C
J
B
Figure 3. Collector Saturation Region
= 1 V
= - 20°C
= 500 mA
= 10
Figure 1. DC Current Gain @ 1 Volt
0.01
0.01
0.01
I
I
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
T
T
I
T
B
J
J
, BASE CURRENT (AMPS)
J
1 A
T
= 125°C
= - 20°C
J
= 25°C
= 125°C
2 A
0.1
0.1
0.1
3 A
T
J
TYPICAL STATIC CHARACTERISTICS
4 A
= 25°C
1
1
1
5 A
T
J
= 25°C
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10
10
10
4
100
0.1
0.1
80
60
40
20
10
10
0
1
1
0.001
0.001
0.001
Figure 4. Collector−Emitter Saturation Voltage
Figure 6. Collector−Emitter Saturation Voltage
V
I
T
C
CE
J
I
/I
C
= - 20°C
B
/I
= 5 V
B
= 20
Figure 2. DC Current Gain @ 5 Volt
= 5
0.01
0.01
0.01
I
I
I
C
C
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
T
J
= 25°C
T
T
T
J
J
J
= - 20°C
= 125°C
= 25°C
0.1
0.1
0.1
T
J
T
= - 20°C
J
= 125°C
T
J
= 125°C
1
1
1
T
J
= 25°C
10
10
10