PBSS302NX,115 NXP Semiconductors, PBSS302NX,115 Datasheet - Page 2

• Manufacturer Part Number: PBSS302NX,115
• Description: TRANS NPN 20V 5.3A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS302NX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 5.3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 265mA, 5.3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.3 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 140 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4173-2; 934059008115; PBSS302NX T/R; PBSS302NX T/R

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
PBSS302NX_2
Product data sheet
Table 2.
Table 3.
Table 4.
[1]
Pin
1
2
3
Type number
PBSS302NX
Type number
PBSS302NX
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
Description
emitter
collector
base
Package
Name
SC-62
Rev. 02 — 20 November 2009
Description
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
Marking code
*5C
20 V, 5.3 A NPN low V
[1]
Simplified outline
3
2
1
PBSS302NX
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
3
sym042
Version
SOT89
2
1
2 of 15