PBSS302NX,115 NXP Semiconductors, PBSS302NX,115 Datasheet - Page 9

• Manufacturer Part Number: PBSS302NX,115
• Description: TRANS NPN 20V 5.3A SOT-89
• Manufacturer: NXP Semiconductors

Specifications of PBSS302NX,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 5.3A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 265mA, 5.3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.3 A
• Power Dissipation: 2100 mW
• Maximum Operating Frequency: 140 MHz (Typ)
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4173-2; 934059008115; PBSS302NX T/R; PBSS302NX T/R

NXP Semiconductors
8. Test information
PBSS302NX_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 12.5 V; I
oscilloscope
t
d
t
on
Rev. 02 — 20 November 2009
C
= 3 A; I
V
t
I
r
(probe)
450 Ω
Bon
= 0.15 A; I
R1
R2
R
Boff
B
V
BB
= −0.15 A
20 V, 5.3 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
(100 %)
Boff
s
t
off
PBSS302NX
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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