PBSS305ND,115 NXP Semiconductors, PBSS305ND,115 Datasheet - Page 13

• Manufacturer Part Number: PBSS305ND,115
• Description: TRANS NPN 100V 3A SC-74
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS305ND,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 360mV @ 400mA, 4A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 170 @ 500mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060014115; PBSS305ND T/R; PBSS305ND T/R

NXP Semiconductors
12. Revision history
Table 9.
PBSS305ND_2
Product data sheet
Document ID
PBSS305ND_2
Modifications:
PBSS305ND_1
Revision history
Release date
20071207
20060410
•
•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table
Section 13 “Legal
6: typing error for maximum value on 6 cm
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 7 December 2007
information”: updated
100 V, 3 A NPN low V
Change notice
-
-
2
footprint amended
PBSS305ND
Supersedes
PBSS305ND_1
-
CEsat
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
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