PBSS305ND,115 NXP Semiconductors, PBSS305ND,115 Datasheet - Page 4

• Manufacturer Part Number: PBSS305ND,115
• Description: TRANS NPN 100V 3A SC-74
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS305ND,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 360mV @ 400mA, 4A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 170 @ 500mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060014115; PBSS305ND T/R; PBSS305ND T/R

NXP Semiconductors
6. Thermal characteristics
PBSS305ND_2
Product data sheet
Table 6.
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
Fig 1. Power derating curves
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
Pulse test: t
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, mounting pad for collector 1 cm
(4) FR4 PCB, standard footprint
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
p
10 ms;
(mW)
Rev. 02 — 7 December 2007
P
1600
1200
2
tot
O
800
400
3
0
, standard footprint
10 %.
75
25
2
(1)
(2)
(3)
(4)
O
3
, standard footprint.
Conditions
in free air
25
2
2
100 V, 3 A NPN low V
75
125
[1][5]
T
006aaa270
[1]
[2]
[3]
[4]
amb
Min
-
-
-
-
-
-
( C)
175
PBSS305ND
CEsat
Typ
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
350
208
167
113
50
45
2
2
.
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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