PBSS305ND,115 NXP Semiconductors, PBSS305ND,115 Datasheet - Page 3

• Manufacturer Part Number: PBSS305ND,115
• Description: TRANS NPN 100V 3A SC-74
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS305ND,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 360mV @ 400mA, 4A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 170 @ 500mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060014115; PBSS305ND T/R; PBSS305ND T/R

NXP Semiconductors
5. Limiting values
PBSS305ND_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
V
V
V
I
I
I
I
P
T
T
T
C
CM
B
BM
j
amb
stg
CBO
CEO
EBO
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Pulse test: t
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
p
10 ms;
Rev. 02 — 7 December 2007
10 %.
2
O
Conditions
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
3
p
p
, standard footprint.
amb
1 ms
1 ms
25 C
100 V, 3 A NPN low V
[1][5]
[1]
[2]
[1]
[3]
[4]
[2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
65
65
PBSS305ND
CEsat
© NXP B.V. 2007. All rights reserved.
Max
100
100
5
1
3
4
0.8
2
360
600
750
1.1
2.5
150
+150
+150
(BISS) transistor
Unit
V
V
V
A
A
A
A
A
mW
mW
mW
W
W
C
C
C
2
2
.
.
3 of 15