PBSS305ND,115 NXP Semiconductors, PBSS305ND,115 Datasheet - Page 7

• Manufacturer Part Number: PBSS305ND,115
• Description: TRANS NPN 100V 3A SC-74
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS305ND,115

• Package / Case: SC-74-6
• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 360mV @ 400mA, 4A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 170 @ 500mA, 2V
• Power - Max: 1.1W
• Frequency - Transition: 140MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 2500 mW
• Maximum Operating Frequency: 140 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060014115; PBSS305ND T/R; PBSS305ND T/R

NXP Semiconductors
7. Characteristics
PBSS305ND_2
Product data sheet
Table 7.
T
[1]
Symbol Parameter
I
I
I
h
V
R
V
V
t
t
t
t
t
t
f
C
CBO
CES
EBO
d
r
on
s
f
off
T
amb
FE
CEsat
BEsat
BEon
CEsat
c
Pulse test: t
= 25 C unless otherwise specified.
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
transition frequency
collector capacitance V
Characteristics
p
300 s;
Rev. 02 — 7 December 2007
0.02.
Conditions
V
V
T
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
V
f = 100 MHz
f = 1 MHz
C
C
C
C
C
C
C
C
C
C
C
C
Bon
j
CB
CB
CE
EB
CE
CE
CE
CE
CE
CE
CC
CE
CB
= 150 C
= 0.5 A; I
= 1 A; I
= 2 A; I
= 3 A; I
= 3 A; I
= 4 A; I
= 2 A; I
= 0.5 A; I
= 1 A; I
= 1 A; I
= 3 A; I
= 3 A; I
= 0.1 A; I
= 5 V; I
= 100 V; I
= 100 V; I
= 80 V; V
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 9.2 V; I
= 10 V; I
= 10 V; I
B
B
B
B
B
B
B
B
B
B
C
= 50 mA
= 200 mA
= 150 mA
= 300 mA
= 400 mA
= 200 mA
= 50 mA
= 100 mA
= 150 mA
= 300 mA
C
C
C
C
C
B
B
C
C
E
= 0 A
= 50 mA
= 50 mA
Boff
= 0.5 A
= 1 A
= 2 A
= 3 A
= 4 A
= 2 A
C
BE
E
E
= 100 mA;
= i
100 V, 3 A NPN low V
= 2 A;
= 0 A
= 0 A;
= 0 V
= 0.1 A
e
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
170
125
70
40
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PBSS305ND
CEsat
Typ
-
-
-
-
275
185
95
55
40
45
90
145
240
215
280
73
0.79
0.81
0.83
0.93
0.95
0.83
14
341
355
246
343
589
140
16
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
100
50
100
100
-
-
-
-
-
60
120
190
310
280
360
95
0.87
0.89
0.92
0.99
1.02
1
-
-
-
-
-
-
-
-
Unit
nA
nA
nA
mV
mV
mV
mV
mV
mV
m
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
MHz
pF
A
7 of 15