MT46V64M16P-6T:A Micron Technology Inc, MT46V64M16P-6T:A Datasheet - Page 55

DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray

MT46V64M16P-6T:A

Manufacturer Part Number
MT46V64M16P-6T:A
Description
DRAM Chip DDR SDRAM 1G-Bit 64Mx16 2.5V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet

Specifications of MT46V64M16P-6T:A

Density
1 Gb
Maximum Clock Rate
333 MHz
Package
66TSOP
Operating Supply Voltage
2.5 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
1G (64M x 16)
Speed
6ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Package / Case
66-TSOP
Organization
64Mx16
Address Bus
16b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
275mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
MICRON
Quantity:
5 530
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Manufacturer:
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Figure 27:
PDF: 09005aef80a2f898/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 1Gb DDR: Rev. I, Core DDR: Rev. B 12/07 EN
Command
Command
Command
Nonconsecutive READ Bursts
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank,
Bank,
Bank,
Col n
Col n
READ
Col n
READ
READ
T0
T0
T0
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
55
DO
n
T2n
T2n
DO
n
Bank,
Col b
Bank,
Bank,
Col b
Col b
Micron Technology, Inc., reserves the right to change products or specifications without notice.
READ
READ
READ
T3
T3
T3
t
DQSQ.
DO
n
T3n
T3n
T3n
1Gb: x4, x8, x16 DDR SDRAM
T4
T4
T4
NOP
NOP
NOP
Transitioning Data
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
T5
T5
NOP
NOP
NOP
DO
b
T5n
T5n
Operations
Don’t Care
DO
b
T6
T6
T6
NOP
NOP
NOP
DO
b

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