PDTC143ES,126 NXP Semiconductors, PDTC143ES,126 Datasheet - Page 3

• Manufacturer Part Number: PDTC143ES,126
• Description: TRANS PNP 50V 100MA SOT54
• Manufacturer: NXP Semiconductors

Specifications of PDTC143ES,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934047420126; PDTC143ES AMO; PDTC143ES AMO

NXP Semiconductors
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
2004 Aug 05
PDTC143ES
PDTC143EE
PDTC143EEF
PDTC143EK
PDTC143ET
PDTC143EU
PDTC143EM
TYPE NUMBER
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
handbook, halfpage
handbook, halfpage
handbook, halfpage
Top view
1
2
1
1
2
3
bottom view
SIMPLIFIED OUTLINE AND SYMBOL
3
2
3
MHC506
MAM364
3
1
1
1
R1
R1
R2
R2
R1
MDB269
R2
3
2
3
2
2
3
PDTC143E series
PIN
1
2
3
1
2
3
1
2
3
Product data sheet
PINNING
base
collector
emitter
base
emitter
collector
base
emitter
collector
DESCRIPTION