SST25VF020B-80-4C-SAE-T Microchip Technology, SST25VF020B-80-4C-SAE-T Datasheet - Page 17

• Manufacturer Part Number: SST25VF020B-80-4C-SAE-T
• Description: 2.7V To 3.6V 2Mbit SPI Serial Flash 8 SOIC 3.90mm (.150") T/R
• Manufacturer: Microchip Technology

Specifications of SST25VF020B-80-4C-SAE-T

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 2M (256K x 8)
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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©2011 Silicon Storage Technology, Inc.
4-KByte Sector-Erase
The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase
instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-
Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any com-
mand sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, fol-
lowed by address bits [A
determine the sector address (SA
before the instruction is executed. The user may poll the Busy bit in the software status register or wait
T
Erase sequence.
Figure 12:Sector-Erase Sequence
SE
for the completion of the internal self-timed Sector-Erase cycle. See Figure 12 for the Sector-
SCK
CE#
SO
SI
23
MODE 3
MODE 0
-A
0
]. Address bits [A
MSB
X
0 1 2 3 4 5 6 7 8
), remaining address bits can be V
17
20
HIGH IMPEDANCE
MS
-A
MSB
ADD.
12
] (A
15 16
2 Mbit SPI Serial Flash
MS
ADD.
= Most Significant address) are used to
23 24
1417 SecErase.0
IL
ADD.
or V
31
IH.
CE# must be driven high
SST25VF020B
S71417-03-000
Data Sheet
02/11