SST25VF020B-80-4C-SAE-T Microchip Technology, SST25VF020B-80-4C-SAE-T Datasheet - Page 21

2.7V To 3.6V 2Mbit SPI Serial Flash 8 SOIC 3.90mm (.150") T/R

SST25VF020B-80-4C-SAE-T

Manufacturer Part Number
SST25VF020B-80-4C-SAE-T
Description
2.7V To 3.6V 2Mbit SPI Serial Flash 8 SOIC 3.90mm (.150") T/R
Manufacturer
Microchip Technology
Datasheet

Specifications of SST25VF020B-80-4C-SAE-T

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
80MHz
Interface
SPI Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
A Microchip Technology Company
©2011 Silicon Storage Technology, Inc.
Write-Disable (WRDI)
Enable-Write-Status-Register (EWSR)
Figure 18:Write Enable (WREN) Sequence
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch bit and AAI bit to 0 disabling any
new Write operations from occurring. The WRDI instruction will not terminate any programming opera-
tion in progress. Any program operation in progress may continue up to T
instruction. CE# must be driven high before the WRDI instruction is executed.
Figure 19:Write Disable (WRDI) Sequence
The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR)
instruction and opens the status register for alteration. The Write-Status-Register instruction must be
executed immediately after the execution of the Enable-Write-Status-Register instruction. This two-
step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP
(software data protection) command structure which prevents any accidental alteration of the status
register values. CE# must be driven low before the EWSR instruction is entered and must be driven
high before the EWSR instruction is executed.
SCK
CE#
SO
SI
MODE 3
MODE 0
21
HIGH IMPEDANCE
MSB
0 1 2 3 4 5 6 7
04
2 Mbit SPI Serial Flash
1417 WRDI.0
BP
after executing the WRDI
SST25VF020B
S71417-03-000
Data Sheet
02/11

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