MT16JSS51264HY-1G1A1 Micron Technology Inc, MT16JSS51264HY-1G1A1 Datasheet - Page 15

• Manufacturer Part Number: MT16JSS51264HY-1G1A1
• Manufacturer: Micron Technology Inc

Specifications of MT16JSS51264HY-1G1A1

• Main Category: DRAM Module
• Sub-category: DDR3 SDRAM
• Module Type: 204SODIMM
• Device Core Size: 64b
• Organization: 512Mx64
• Total Density: 4GByte
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Operating Current: 2.24A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 204
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Figure 4:
Table 19:
PDF: 09005aef832ed836/Source: 09005aef832ed8fb
JSS16C512x64H.fm - Rev. B 12/08 EN
Condition
Clears
Sets
Hysteresis
Hysteresis
Above window bit
Below window bit
Notes:
1. T
2. T
3. Hyst is the value set in the hysteresis bits of the configuration register.
Temperature
T
T
Gradient
H
L
H
L
Falling
Rising
2
1
is the value set in the alarm temperature lower boundary trip register.
is the value set in the alarm temperature upper boundary trip register.
Below Alarm Window Bit
Critical Temperature
T
L
4GB (x64, DR): 204-Pin DDR3 SDRAM SODIMM
- Hyst
15
T
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Temperature
Gradient
Falling
Rising
T
Above Alarm Window Bit
H
-
Hyst
Electrical Specifications
3
©2008 Micron Technology, Inc. All rights reserved.
T
L
Critical Temperature
-
Hyst
T
H
T
- Hyst
H