MT16JSS51264HY-1G1A1 Micron Technology Inc, MT16JSS51264HY-1G1A1 Datasheet - Page 7

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MT16JSS51264HY-1G1A1

Manufacturer Part Number
MT16JSS51264HY-1G1A1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16JSS51264HY-1G1A1

Main Category
DRAM Module
Sub-category
DDR3 SDRAM
Module Type
204SODIMM
Device Core Size
64b
Organization
512Mx64
Total Density
4GByte
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Operating Current
2.24A
Number Of Elements
16
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
204
Mounting
Socket
Lead Free Status / RoHS Status
Compliant
Electrical Specifications
Table 6:
Table 7:
PDF: 09005aef832ed836/Source: 09005aef832ed8fb
JSS16C512x64H.fm - Rev. B 12/08 EN
Symbol Parameter
Vin, Vout
Ivref
Vdd
Symbol
Ivtt
Vtt
Ioz
T
T
Ii
A
C
Vdd
Vdd supply voltage
Termination reference current from Vtt
Termination reference voltage (DC) –
command/address bus
Input leakage current;
Any input 0V ≤ Vin ≤ Vdd;
Vref input 0V ≤ Vin ≤ 0.95V
(All other pins not under
test = 0V)
Output leakage current;
0V ≤ Vout ≤ Vdd;
DQ and ODT are disabled;
ODT is HIGH
Vref supply leakage current;
Vrefdq = Vdd/2 or Vrefca = Vdd/2
(All other pins not under test = 0V)
Module ambient operating
temperature
DDR3 SDRAM component case
operating temperature
Absolute Maximum Ratings
Operating Conditions
Parameter
Vdd supply voltage relative to Vss
Voltage on any pin relative to Vss
Notes:
Stresses greater than those listed in Table 6 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in each device’s data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. Vtt termination voltage in excess of the stated limit will adversely affect the command and
2. T
3. For further information, refer to technical note
4. The refresh rate is required to double when 85°C < T
address signals’ voltage margin and will reduce timing margins.
on Micron’s Web site.
A
and T
C
are simultaneous requirements.
Address
inputs,
RAS#, CAS#,
WE#, BA
S#, CKE,
ODT, CK,
CK#
DM
DQ, DQS,
DQS#
Commercial
Industrial
Commercial
Industrial
0.49 × Vdd - 20mV 0.5 × Vdd 0.51 × Vdd + 20mV
4GB (x64, DR): 204-Pin DDR3 SDRAM SODIMM
7
1.425
–600
Min
–32
–16
–10
–18
–40
–40
–4
0
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
–0.4
–0.4
Nom
TN-00-08: “Thermal Applications,”
1.5
0
0
0
0
0
C
≤ 95°C.
Electrical Specifications
+1.975
+1.975
1.575
Max
+600
Max
+32
+16
+10
+18
+70
+85
+95
+95
©2008 Micron Technology, Inc. All rights reserved.
+4
Units Notes
mA
µA
µA
µA
°C
°C
°C
°C
V
V
Units
available
V
V
2, 3, 4
2, 3
1

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