MT18HVF25672PY-800E1 Micron Technology Inc, MT18HVF25672PY-800E1 Datasheet - Page 13

• Manufacturer Part Number: MT18HVF25672PY-800E1
• Manufacturer: Micron Technology Inc

Specifications of MT18HVF25672PY-800E1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 1Gb
• Access Time (max): 40ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 2.88A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 14:
PDF: 09005aef82255aba/Source: 09005aef81c753af
HVF18C128x72.fm - Rev. C 3/07 EN
128–255
99–127
47–61
65–71
73–90
95–98
Byte
33
34
35
36
37
38
39
40
41
42
43
44
45
46
62
63
64
72
91
92
93
94
Address and command hold time,
Data/data mask input setup time,
Data/data mask input hold time,
Write recovery time,
WRITE-to-READ command delay,
READ-to-PRECHARGE command delay,
Memory analysis probe
Extension for bytes 41 and 42
MIN active-to-active/refresh time,
MIN AUTO REFRESH-to-ACTIVE/
AUTO REFRESH command period,
SDRAM device MAX cycle time,
SDRAM device MAX DQS–DQ skew time,
SDRAM device MAX read data hold skew factor,
PLL relock time
Optional features, not supported
SPD revision
Checksum for bytes 0–62 ECC/ECC and parity
Manufacturer’s JEDEC ID code
Manufacturer’s JEDEC ID code
Manufacturing location
Module part number (ASCII)
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Module serial number
Reserved for manufacturer-specific data
Reserved for customer-specific data
Serial Presence-Detect Matrix (continued)
Notes:
1. The
DDR2 device specification is
t
WR
Description
t
RC SPD values shown are JEDEC DDR2 device specification values. The actual Micron
t
CK (MAX)
t
t
DH
WTR
t
t
t
t
DS
RC
RFC
IH
b
b
1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM VLP RDIMM
b
1
t
RTP
t
DQSQ
t
13
RC = 55ns for all speed grades.
t
QHS
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Entry (Version)
(continued)
Release 1.2
-667/-53E
-667/-53E
-667/-53E
MICRON
1–12
-667
-53E
-40E
-40E
-667
-53E
-40E
-40E
-40E
-667
-53E
-40E
-667
-53E
-40E
15µs
-667
-53E
-40E
1–9
0
Serial Presence-Detect
©2003 Micron Technology, Inc. All rights reserved.
Variable data
Variable data
Variable data
Variable data
01–0C
89/8D
01–09
34/38
9B/9F
1GB
2D
27
37
47
10
15
17
22
27
3C
1E
28
1E
00
00
3C
37
69
80
18
1E
23
22
28
00
12
2C
00
00
0F
FF
FF