MT18HVF25672PY-800E1 Micron Technology Inc, MT18HVF25672PY-800E1 Datasheet - Page 4

• Manufacturer Part Number: MT18HVF25672PY-800E1
• Manufacturer: Micron Technology Inc

Specifications of MT18HVF25672PY-800E1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 1Gb
• Access Time (max): 40ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 2.88A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 5:
PDF: 09005aef82255aba/Source: 09005aef81c753af
HVF18C128x72.fm - Rev. C 3/07 EN
DQS0#–DQS17#
DQS0–DQS17,
RAS#, CAS#,
DQ0–DQ63
CK0, CK0#
V
BA0, BA1
SA0–SA2
CB0–CB7
Symbol
E
A0–A13
RESET#
DD
V
P
RR
ODT0
CKE0
WE#
SDA
V
DDSPD
AR
RFU
S0#
SCL
V
NC
/V
_O
REF
SS
_I
DD
N
UT
Q
Pin Description
(open drain)
(LVCMOS)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
(SSTL_18)
Output
Supply
Supply
Supply
Supply
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Type
I/O
I/O
I/O
I/O
–
–
On-die termination: ODT (registered HIGH) enables termination resistance internal to
the DDR2 SDRAM. When enabled, ODT is only applied to the following pins: DQ, DQS,
DQS#, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.
Clock: CK and CK# are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of CK#. Output
data (DQs and DQS/DQS#) is referenced to the crossings of CK and CK#.
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW) deactivates
clocking circuitry on the DDR2 SDRAM.
Chip select: S# enables (registered LOW) and disables (registered HIGH) the command
decoder.
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.
Bank address inputs: BA0–BA1 define to which device bank an ACTIVE, READ, WRITE,
or PRECHARGE command is being applied. BA0–BA1 define which mode register,
including MR, EMR, EMR(2), and EMR(3), is loaded during the LOAD MODE command.
Address inputs: Provide the row address for ACTIVE commands, and the column address
and auto precharge bit (A10) for READ/WRITE commands, to select one location out of
the memory array in the respective bank. A10 sampled during a PRECHARGE command
determines whether the PRECHARGE applies to one device bank (A10 LOW, device bank
selected by BA0–BA1/BA2) or all device banks (A10 HIGH). The address inputs also provide
the op-code during a LOAD MODE command.
Parity bit for the address and control bus.
Serial clock for presence-detect: SCL is used to synchronize the presence-detect data
transfer to and from the module.
Presence-detect address inputs: These pins are used to configure the presence-detect
device.
Asynchronously forces all registered outputs LOW when RESET# is LOW. This signal can be
used during power up to ensure that CKE is LOW and DQs are High-Z.
Data strobe: Output with read data, input with write data for source synchronous
operation. Edge-aligned with read data, center-aligned with write data. DQS# is only
used when differential data strobe mode is enabled via the LOAD MODE command.
Data input/output: Bidirectional data bus.
Check bits.
Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and
data into and out of the presence-detect portion of the module.
Parity error found on the address and control bus.
Power supply: 1.8V ±0.1V.
SSTL_18 reference voltage.
Ground.
Serial EEPROM positive power supply: +1.7V to +3.6V.
No connect: These pins should be left unconnected.
Reserved for future use.
1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM VLP RDIMM
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Description
Pin Assignments and Descriptions
©2003 Micron Technology, Inc. All rights reserved.