MT18HVF25672PY-800E1 Micron Technology Inc, MT18HVF25672PY-800E1 Datasheet - Page 2

• Manufacturer Part Number: MT18HVF25672PY-800E1
• Manufacturer: Micron Technology Inc

Specifications of MT18HVF25672PY-800E1

• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 240RDIMM
• Device Core Size: 72b
• Organization: 256Mx72
• Total Density: 2GByte
• Chip Density: 1Gb
• Access Time (max): 40ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 2.88A
• Number Of Elements: 18
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 240
• Mounting: Socket
• Lead Free Status / RoHS Status: Compliant

Table 2:
Table 3:
PDF: 09005aef82255aba/Source: 09005aef81c753af
HVF18C128x72.fm - Rev. C 3/07 EN
Part Number
Refresh count
Row address
Device bank address
Device page size per bank
Device configuration
Column address
Module rank address
MT18HVF12872(P)Y-667__
MT18HVF12872(P)Y-53E__
MT18HVF12872(P)Y-40E__
Addressing
Part Numbers and Timing Parameters 1GB Modules
Base Device: MT47H128M4
2
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown), designating component and PCB
revisions. Consult factory for current revision codes. Example: MT18HVF12872(P)Y-667C2
Module
Density
1GB
1GB
1GB
1
, 512Mb DDR2 SDRAM
Configuration
1GB (x72, ECC, SR) 240-Pin DDR2 SDRAM VLP RDIMM
128 Meg x 72
128 Meg x 72
128 Meg x 72
2
Bandwidth
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Memory Clock/
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
Data Rate
512Mb (128 Meg x 4)
©2003 Micron Technology, Inc. All rights reserved.
2K (A0–A9, A11)
16K (A0–A13)
4 (BA0, BA1)
1 (S0#)
1GB
1KB
8K
(CL-
Latency
t
5-5-5
4-4-4
3-3-3
RCD-
Features
t
RP)