IC SNAPHAT BATT/CRYSTAL 28-SOIC

M4T32-BR12SH1

Manufacturer Part NumberM4T32-BR12SH1
DescriptionIC SNAPHAT BATT/CRYSTAL 28-SOIC
ManufacturerSTMicroelectronics
M4T32-BR12SH1 datasheets
MSDS Material Safety Datasheet
 


Specifications of M4T32-BR12SH1

Battery TypeLi-(CF)Operating Supply Voltage0 V to 2.8 V
Maximum Operating Temperature+ 70 CMinimum Operating Temperature0 C
Package / CaseSOIC-28Mounting StyleSMD/SMT
Capacity120 mAhChemical SystemLithium Poly-Carbonmonoflouride
Primary TypePackSizeCylindrical
StandardsUL RecognizedTemperature, Operating0 to +75 °C
Temperature, Operating, Maximum70 °CTemperature, Operating, Minimum0 °C
TerminationSnap-OnVoltage, Battery3 V
Voltage, Rating3 VSupply Voltage Range2.8V
Battery Ic Case StyleSOICNo. Of Pins4
Operating Temperature Range0°C To +70°CCrystal TerminalsSnap On
Load Capacitance12.5pFRohs CompliantYes
Crystal Mounting TypeSMDLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names497-3687-5  
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M48T35AV
3.6
V
noise and negative going transients
CC
I
transients, including those produced by output switching, can produce voltage
CC
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A bypass capacitor value of 0.1 µF (as shown in
Figure
11) is recommended in order to provide the needed filtering.
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 11. Supply voltage protection
bus. These transients can be reduced if
CC
that drive it to values below V
CC
to V
(cathode connected to V
CC
SS
V CC
0.1µF
Doc ID 6845 Rev 8
Clock operations
bus. The energy stored in the
CC
by as much as
SS
, anode to V
). Schottky diode
CC
SS
V CC
DEVICE
V SS
AI02169
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