BAP50-05 NXP Semiconductors, BAP50-05 Datasheet - Page 4

• Manufacturer Part Number: BAP50-05
• Description: Two planar PIN diodes in common cathode configuration in a SOT23 small plastic SMD package
• Manufacturer: NXP Semiconductors

Specifications of BAP50-05

• Configuration: Dual Common Cathode
• Forward Current: 50mA
• Forward Voltage: 1.1V
• Power Dissipation: 250mW
• Operating Temperature Classification: Military
• Reverse Voltage: 50V
• Package Type: SOT-23
• Mounting: Surface Mount
• Maximum Series Resistance @ Minimum If: 40@0.5mAOhm
• Maximum Series Resistance @ Maximum If: 5@10mAOhm
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
GRAPHICAL DATA
1999 May 10
handbook, halfpage
handbook, halfpage
General purpose PIN diode
f = 100 MHz; T
|
(1) I
Diode inserted in series with a 50  stripline circuit and
biased via the analyzer Tee network.
T
Fig.4
S 21
(dB)
Fig.2
amb
(Ω)
r D
10
10
|
−1
−2
−3
−4
−5
F
= 25 C.
10
2
10
0
= 10 mA.
1
3
2
0.5
−2
Insertion loss (S
as a function of frequency; typical values.
Forward resistance as a function of the
forward current; typical values.
j
= 25 C.
1
10
(2) I
−1
1.5
F
= 1 mA.
21

2
) of the diode in on-state
2
(1)
(2)
(3)
1
I F (mA)
(3) I
2.5
f (GHz)
F
MGS319
MGS317
= 0.5 mA.
10
3
4
handbook, halfpage
handbook, halfpage
Fig.5
f = 1 MHz; T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
|
S 21
(dB)
amb
(fF)
C d
−10
−15
−20
−25
10
10
|
−5
= 25 C.
2
10
0
3
2
0.5
−1
Isolation (S
function of frequency; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 C.
1
21
1

1.5
2
) of the diode in off-state as a
2
10
Product specification
BAP50-05
V R (V)
2.5
f (GHz)
MGS318
MGS321
10
3
2