K4H561638H-ZPB3 Samsung Semiconductor, K4H561638H-ZPB3 Datasheet - Page 15

• Manufacturer Part Number: K4H561638H-ZPB3
• Manufacturer: Samsung Semiconductor

Specifications of K4H561638H-ZPB3

• Lead Free Status / Rohs Status: Compliant

18.0 Overshoot/Undershoot specification for Data, Strobe and Mask Pins
K4H561638H
Maximum peak amplitude allowed for overshoot
Maximum peak amplitude allowed for undershoot
The area between the overshoot signal and VDD must be less than or equal to
The area between the undershoot signal and GND must be less than or equal to
DQ/DM/DQS AC overshoot/Undershoot Definition
Parameter
-1
-2
-3
-4
-5
5
4
3
2
1
0
Maximum Amplitude = 1.2V
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
VDDQ
Area
Overshoot
Tims(ns)
Maximum Amplitude = 1.2V
undershoot
GND
DDR400
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
Industrial
Rev. 1.3 February 2007
Specification
DDR333
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V
DDR SDRAM
DDR200/266
2.4 V-ns
2.4 V-ns
1.2 V
1.2 V