K4H561638H-ZPB3 Samsung Semiconductor, K4H561638H-ZPB3 Datasheet - Page 21

• Manufacturer Part Number: K4H561638H-ZPB3
• Manufacturer: Samsung Semiconductor

Specifications of K4H561638H-ZPB3

• Lead Free Status / Rohs Status: Compliant

DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity
23.0 IBIS : I/V Characteristics for Input and Output Buffers
K4H561638H
the of the V-I curve of Figure 3 and 4.
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Typical
Minimum
Maximum
- 1 0 0
- 1 2 0
- 1 4 0
- 1 6 0
- 1 8 0
- 2 0 0
- 2 2 0
160
140
120
100
- 2 0
- 4 0
- 6 0
- 8 0
80
60
40
20
0
0
0.0
0 .0
Pulldown Characteristics for Full Strength Output Driver
Pullup Characteristics for Full Strength Output Driver
25×C
70×C
0×C
0.5
Vdd/Vddq = 2.5V, typical process
Vdd/Vddq = 2.3V, slow-slow process
Vdd/Vddq = 2.7V, fast-fast process
1.0
1 .0
1.5
2.0
2 .0
Industrial
Rev. 1.3 February 2007
2.5
Vout(V)
Vout(V)
+/-
Typical High
Minumum
Typical Low
Maximum
Typical Low
Typical High
Maximum
Minimum
DDR SDRAM
10%, for device drain to