MT41J256M8HX-125:D Micron Technology Inc, MT41J256M8HX-125:D Datasheet - Page 164

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MT41J256M8HX-125:D

Manufacturer Part Number
MT41J256M8HX-125:D
Description
MICMT41J256M8HX-125:D 2GB DDR3 SDRAM
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-125:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
185mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
800MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT41J256M8HX-125:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J256M8HX-125:D
Manufacturer:
MICRON/美光
Quantity:
20 000
Table 81:
Table 82:
Table 83:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D5.fm - Rev G 2/09 EN
Figure and Page
Figure 108 on page 165
Figure 109 on page 165
Figure 110 on page 166
Figure 111 on page 167
Figure 112 on page 167
M9
0
0
0
0
1
1
1
1
M10
n/a
n/a
n/a
n/a
0
0
1
1
MR2 (R
MR1 (R
Mode Registers for R
Mode Registers for R
Timing Diagrams for Dynamic ODT
TT
M6
Notes:
0
0
1
1
0
0
1
1
TT
_
WR
_
NOM
)
M9
n/a
n/a
n/a
n/a
0
1
0
1
)
1. RZQ = 240Ω. If R
M2
0
1
0
1
0
1
0
1
Title
Dynamic ODT: ODT Asserted Before and After the WRITE, BC4
Dynamic ODT: Without WRITE Command
Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8
Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4
Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4
TT
TT
_
_
NOM
WR
TT
R
Reserved
Reserved
_
RZQ/12
TT
(RZQ)
RZQ/4
RZQ/2
RZQ/6
RZQ/8
NOM
Off
_
NOM
Reserved
R
Dynamic ODT off: WRITE does not affect R
is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed
(RZQ)
RZQ/4
RZQ/2
TT
n/a
n/a
n/a
n/a
_
WR
164
Micron Technology, Inc., reserves the right to change products or specifications without notice.
R
Reserved
Reserved
(Ohms)
TT
120
Off
60
40
20
30
_
NOM
2Gb: x4, x8, x16 DDR3 SDRAM
On-Die Termination (ODT)
©2006 Micron Technology, Inc. All rights reserved.
Mode Restriction
Self refresh, write
Reserved
(Ohms)
TT
R
TT
Self refresh
_
120
n/a
n/a
n/a
n/a
60
NOM
R
_
TT
WR
n/a
n/a
n/a
_
NOM
.

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