MT41J256M8HX-125:D Micron Technology Inc, MT41J256M8HX-125:D Datasheet - Page 56

• Manufacturer Part Number: MT41J256M8HX-125:D
• Description: MICMT41J256M8HX-125:D 2GB DDR3 SDRAM
• Manufacturer: Micron Technology Inc
• Type: DDR3 SDRAMr
• Series: -r

Specifications of MT41J256M8HX-125:D

• Organization: 256Mx8
• Address Bus: 18b
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 185mA
• Pin Count: 78
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 2G (256M x 8)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / Rohs Status: Compliant

Figure 24:
Figure 25:
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D3.fm - Rev G 2/09 EN
t AONPD
Begin point: Rising edge of CK - CK#
with ODT first registered HIGH
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
CK
CK#
DQ, DM
DQS, DQS#
TDQS, TDQS#
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL
t
t
AONPD and
ADC Definition
V
RTT
End point:
Extrapolated
point at V
V
_
SS
NOM
Q
t
AOFPD Definition
RTT
_
NOM
CNW
T
SW
t AONPD
1
t ADC
T
End point: Extrapolated point at V
SW
T
2
SW
V
T
CK
CK#
SW
21
SW
1
11
Begin point: Rising edge of CK - CK# defined by
the end point of ODTL
V
t AOFPD
Begin point: Rising edge of CK - CK#
with ODT first registered LOW
SW
V
1
SW
2
56
V
V
SW
RTT
2
_
WR
V
SW
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SS
CWN
2
Q
4 or ODTL
End point: Extrapolated point at V
t ADC
V
SW
T
2Gb: x4, x8, x16 DDR3 SDRAM
SW
1
CWN
t AOFPD
12
End point: Extrapolated point at V
T
T
8
SW
SW
T
2
SW
22
1
©2006 Micron Technology, Inc. All rights reserved.
ODT Characteristics
V
V
RTT
RTT
_
_
NOM
NOM
V
RTT
V
V
DD
SS
DD
_
Q/2
Q
WR
Q/2
V
RTT
SS
_
Q
NOM