K4S643232H-UC60 Samsung Semiconductor, K4S643232H-UC60 Datasheet - Page 8

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K4S643232H-UC60

Manufacturer Part Number
K4S643232H-UC60
Description
Manufacturer
Samsung Semiconductor
Type
SDRAMr
Datasheet

Specifications of K4S643232H-UC60

Organization
2Mx32
Density
64Mb
Address Bus
13b
Access Time (max)
6/5.5ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
150mA
Pin Count
86
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant

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Notes :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
ABSOLUTE MAXIMUM RATINGS
K4S643232H
CAPACITANCE
Note :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Short circuit current
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
0
~ DQ
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
31
IH
IL
Parameter
DD
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
Pin
(V
DD
IN
= 3.3V, T
≤ V
DDQ
,
A
V
= 23°C, f = 1MHz, V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
C
IN
C
T
C
ADD
OUT
, V
I
CLK
, V
STG
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
REF
-
OUT
SS
DDQ
= 0V, T
= 1.4V ± 200 mV)
- 8 -
A
= 0 to 70°C)
Typ
3.3
3.0
0
-
-
-
Min
-
-
-
-
-55 ~ +150
V
-1.0 ~ 4.6
-1.0 ~ 4.6
DDQ
Value
Max
3.6
0.8
0.4
10
50
-
+0.3
Max
4.5
4.5
6.5
4
Rev. 1.2 April 2006
Unit
uA
V
V
V
V
V
SDRAM
I
Unit
I
mA
OH
°C
OL
V
V
Unit
pF
pF
pF
pF
Note
= -2mA
= 2mA
1
2
3

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