SUP85N03-04P-E3 Siliconix / Vishay, SUP85N03-04P-E3 Datasheet

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SUP85N03-04P-E3

Manufacturer Part Number
SUP85N03-04P-E3
Description
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ohm; ID 85A; TO-220AB; PD 166W; VGS +/-20V
Manufacturer
Siliconix / Vishay
Datasheet
1.SUP85N03-04P-E3.pdf (6 pages)

Specifications of SUP85N03-04P-E3

Channel Type
N
Current, Drain
85 A
Fall Time
35 ns
Gate Charge, Total
90 nC
Operating And Storage Temperature
–55 to +175 °C
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
166 W
Resistance, Drain To Source On
0.007 Ohm
Resistance, Thermal, Junction To Case
0.9 °C/W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
–55 °C
Thermal Resistance, Junction To Ambient
40 °C/W
Time, Rise
18 ns
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
30 S
Voltage, Breakdown, Drain To Source
30 V
Voltage, Diode Forward
1.5 V
Voltage, Forward, Diode
1.5 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Notes
a.
b.
c.
d.
Document Number: 71241
S-40101—Rev. C, 26-Jan-04
Ordering Information: SUP85N03-04P (TO-220AB)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
J
Junction-to-Ambient
Junction-to-Case
V
Package limited.
Duty cycle v 1%.
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
(BR)DSS
ti
30
30
t A bi
SUP85N03-04P
TO-220AB
(V)
Top View
G D S
t
SUB85N03-04P (TO-263, D
SUB85N03-04P—E3 (TO-263, D
J
J
b
b
b
= 175_C)
= 175_C)
DRAIN connected to TAB
0.0043 @ V
N-Channel 30-V (D-S) 175_C MOSFET
0.007 @ V
Parameter
Parameter
r
DS(on)
GS
GS
T
(W)
= 4.5 V
C
= 10 V
= 25_C (TO-220AB and TO-263)
2
PAK)
PCB Mount (TO-263)
T
Free Air (TO-220AB)
2
A
PAK, Lead Free)
= 25_C (TO-263)
T
L = 0.1 mH
T
C
A
C
= 100_C
= 25_C
= 25_C UNLESS OTHERWISE NOTED)
SUB85N03-04P
I
D
d
85
85
d
G
(D
Top View
(A)
TO-263
a
a
2
PAK)
D
a
S
Symbol
Symbol
T
R
R
R
J
V
V
E
I
I
P
P
, T
DM
thJA
thJC
I
I
AR
GS
DS
AR
D
D
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D TO-263 (D
SUP/SUB85N03-04P
2
PAK) 100% R
G
−55 to 175
N-Channel MOSFET
Limit
Limit
"20
166
3.75
62.5
240
280
85
85
0.9
30
75
40
a
a
c
Vishay Siliconix
D
S
g
Tested
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
A
A
1

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SUP85N03-04P-E3 Summary of contents

Page 1

... DS(on) 0.0043 @ 0.007 @ V GS TO-220AB DRAIN connected to TAB Top View SUP85N03-04P Ordering Information: SUP85N03-04P (TO-220AB) SUB85N03-04P (TO-263, D SUB85N03-04P—E3 (TO-263, D ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current ...

Page 2

SUP/SUB85N03-04P Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a ...

Page 3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 250 thru 200 150 100 − Drain-to-Source Voltage (V) DS Transconductance 180 T = −55_C C 150 120 ...

Page 4

SUP/SUB85N03-04P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 1.6 1.2 0.8 0.4 0.0 −50 − − Junction Temperature (_C) J ...

Page 5

THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 100 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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