SUP85N03-04P-E3 Siliconix / Vishay, SUP85N03-04P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP85N03-04P-E3
• Description: MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ohm; ID 85A; TO-220AB; PD 166W; VGS +/-20V
• Manufacturer: Siliconix / Vishay

Specifications of SUP85N03-04P-E3

• Channel Type: N
• Current, Drain: 85 A
• Fall Time: 35 ns
• Gate Charge, Total: 90 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 166 W
• Resistance, Drain To Source On: 0.007 Ohm
• Resistance, Thermal, Junction To Case: 0.9 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 40 °C/W
• Time, Rise: 18 ns
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 30 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Document Number: 71241
S-40101—Rev. C, 26-Jan-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
7000
6000
5000
4000
3000
2000
1000
250
200
150
100
180
150
120
50
90
60
30
0
0
0
0
0
0
C
rss
20
2
V
6
V
T
V
DS
DS
C
GS
= −55_C
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
= 10 thru 6 V
I
Transconductance
D
− Drain Current (A)
Capacitance
40
12
4
C
C
iss
oss
60
18
6
5 V
125_C
25_C
80
24
8
2, 3 V
4 V
100
10
30
0.008
0.006
0.004
0.002
0.000
250
200
150
100
50
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 85 A
20
20
On-Resistance vs. Drain Current
1
= 15 V
SUP/SUB85N03-04P
V
GS
Q
Transfer Characteristics
V
40
g
GS
− Gate-to-Source Voltage (V)
25_C
I
D
− Total Gate Charge (nC)
40
T
2
= 4.5 V
C
− Drain Current (A)
Gate Charge
= 125_C
60
Vishay Siliconix
60
3
80
−55_C
80
4
100
V
GS
www.vishay.com
100
= 10 V
5
120
140
120
6
3