SUP85N03-04P-E3 Siliconix / Vishay, SUP85N03-04P-E3 Datasheet - Page 2

• Manufacturer Part Number: SUP85N03-04P-E3
• Description: MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ohm; ID 85A; TO-220AB; PD 166W; VGS +/-20V
• Manufacturer: Siliconix / Vishay

Specifications of SUP85N03-04P-E3

• Channel Type: N
• Current, Drain: 85 A
• Fall Time: 35 ns
• Gate Charge, Total: 90 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 166 W
• Resistance, Drain To Source On: 0.007 Ohm
• Resistance, Thermal, Junction To Case: 0.9 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 40 °C/W
• Time, Rise: 18 ns
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 30 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

SUP/SUB85N03-04P
Vishay Siliconix
Notes
a.
b.
c.
d.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
TO-263 (D
b
b
b
2
PAK) only.
g
Parameter
a
d
b
b
b
b
b
a
a
a
a
J
=25_C UNLESS OTHERWISE NOTED)
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
t
t
I
I
C
GS(th)
D(on)
C
C
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
I
I
Q
Q
g
R
SM
RM
I
t
oss
t
rss
t
SD
iss
S
rr
fs
gs
gd
r
f
g
rr
g
C
I
V
V
V
V
V
V
D
= 25_C)
DS
DS
GS
GS
GS
DS
DS
^ 85 A, V
= 30 V, V
= 30 V, V
= 15 V, V
= 10 V, I
= 10 V, I
I
V
= 0 V, V
V
V
V
V
F
F
V
V
V
DS
V
V
DD
DD
DS
DS
Test Condition
I
= 85 A, di/dt = 100 A/ms
DS
GS
DS
GS
DS
F
= 85 A, V
= 0 V, V
= 15 V, R
= 15 V, R
= V
w 5 V, V
= 0 V, I
= 30 V, V
= 4.5 V, I
,
c
= 10 V, I
= 15 V, I
GEN
DS
D
D
GS
GS
GS
GS
GS
= 30 A, T
= 30 A, T
= 25 V, f = 1 MHz
, I
= 10 V, R
= 0 V, T
= 0 V, T
GS
D
= 10 V, I
D
GS
L
L
GS
D
= 250 mA
D
D
GS
= 250 mA
= 0.18 W
= 0.18 W
= "20 V
= 30 A
= 30 A
= 20 A
= 10 V
= 0 V
= 0 V
,
J
J
J
J
= 125_C
= 175_C
D
D
g
= 125_C
= 175_C
= 2.5 W
= 85 A
m
Min
120
0.7
30
30
1
0.0035
0.0055
Typ
4500
1380
0.03
615
1.1
1.4
71
15
16
15
12
50
22
42
2
S-40101—Rev. C, 26-Jan-04
Document Number: 71241
0.0043
0.0065
"100
Max
0.008
0.007
0.06
250
240
3.8
1.5
2.1
50
90
23
18
75
35
85
70
3
1
Unit
nA
mA
m
pF
nC
mC
ns
ns
ns
W
W
W
V
V
A
S
A
A
V
A