SUP85N03-04P-E3 Siliconix / Vishay, SUP85N03-04P-E3 Datasheet - Page 5

• Manufacturer Part Number: SUP85N03-04P-E3
• Description: MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ohm; ID 85A; TO-220AB; PD 166W; VGS +/-20V
• Manufacturer: Siliconix / Vishay

Specifications of SUP85N03-04P-E3

• Channel Type: N
• Current, Drain: 85 A
• Fall Time: 35 ns
• Gate Charge, Total: 90 nC
• Operating And Storage Temperature: –55 to +175 °C
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 166 W
• Resistance, Drain To Source On: 0.007 Ohm
• Resistance, Thermal, Junction To Case: 0.9 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: –55 °C
• Thermal Resistance, Junction To Ambient: 40 °C/W
• Time, Rise: 18 ns
• Time, Turn-off Delay: 50 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 30 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Diode Forward: 1.5 V
• Voltage, Forward, Diode: 1.5 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Document Number: 71241
S-40101—Rev. C, 26-Jan-04
THERMAL RATINGS
0.01
0.1
100
2
1
10
80
60
40
20
0
−5
0
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Maximum Avalanche and Drain Current
25
Single Pulse
T
C
vs. Case Temperature
50
− Ambient Temperature (_C)
10
−4
75
100
Normalized Thermal Transient Impedance, Junction-to-Case
10
−3
125
150
Square Wave Pulse Duration (sec)
175
10
−2
10
−1
1000
100
0.1
10
1
0.1
Limited by r
V
DS
1
Single Pulse
T
− Drain-to-Source Voltage (V)
Safe Operating Area
DS(on)
SUP/SUB85N03-04P
C
= 25_C
1
Vishay Siliconix
10
10
www.vishay.com
100
10 ms
100 ms
1 ms
10 ms
100 ms
dc
100
5