TE28F800B3TA110 Intel, TE28F800B3TA110 Datasheet - Page 27

• Manufacturer Part Number: TE28F800B3TA110
• Manufacturer: Intel

Specifications of TE28F800B3TA110

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

5.0
5.1
5.1.1
Datasheet
Figure 5. 40-Lead TSOP Package for x8 Configurations
Pinout and Signal Descriptions
This section explains the package pinout and signal descriptions.
Signal Pinouts
The B3 flash memory device is available in 40-lead TSOP (x8,
Figure
(x16,
40-Lead and 48-Lead TSOP Packages
NOTES:
1. 40-Lead TSOP available for 8-Mbit and 16-Mbit densities only.
2. Lower densities have NC on the upper address pins. For example, an 8-Mbit device will have NC on Pin 38.
Figure
6), 48-ball BGA(x8 and x16,
4 M
9) packages.
A
A
A
A
A
A
A
A
WE#
RP#
V
WP#
A
A
A
A
A
A
A
A
16
15
14
13
12
11
9
8
PP
18
7
6
5
4
3
2
1
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
Figure 8
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Advanced Boot Block
10 mm x 20 mm
40-Lead TSOP
TOP VIEW
and
Figure
9, respectively), and 48-ball VF BGA
Figure
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
5), 48-lead TSOP (x16,
A
GND
A
A
A
DQ
DQ
DQ
DQ
V
V
NC
DQ
DQ
DQ
DQ
OE#
GND
CE#
A
17
20
19
10
CCQ
CC
0
7
6
5
4
3
2
1
0
16 M
8 M
0580_01
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