TE28F800B3TA110 Intel, TE28F800B3TA110 Datasheet - Page 47

• Manufacturer Part Number: TE28F800B3TA110
• Manufacturer: Intel

Specifications of TE28F800B3TA110

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 110ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

8.3
8.4
Datasheet
Table 21. Erase and Program Timing
Figure 12. AC Input/Output Reference Waveform
Erase and Program Timing
AC I/O Test Conditions
NOTE: Input timing begins, and output timing ends, at V
t
t
t
t
t
t
t
NOTES:
BWPB
BWMB
WHQV1
WHQV2
WHQV3
WHRH1
WHRH2
1. Typical values measured at T
2. Excludes external system-level overhead.
3. Sampled, but not 100% tested.
Symbol
V
Worst-case speed conditions are when V
/ t
/ t
/ t
/ t
/ t
0V
CCQ
EHQV1
EHQV2
EHQV3
EHRH1
EHRH2
Input
4-KW Parameter Block
Word Program Time
32-KW Main Block
Word Program Time
Word Program Time for 0.13
and 0.18 Micron Product
Word Program Time for 0.25
Micron Product
4-KW Parameter Block
Erase Time
32-KW Main Block
Erase Time
Program Suspend Latency
Erase Suspend Latency
V
CCQ
Parameter
/2
A
= +25 °C and nominal voltages.
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
CC
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
Note
= V
V
1,3
1,3
PP
CC
CCQ
Min.
/2. Input rise and fall times (10% to 90%) < 5 ns.
0.10
Typ
0.8
0.5
1.65 V–3.6 V
12
22
1
5
5
Max
0.30
200
200
2.4
10
20
4
5
V
0.03
0.24
11.4 V–12.6 V
Typ
0.4
0.6
CCQ
8
8
5
5
/2
Max
0.12
185
185
Output
10
20
1
4
5
Unit
µs
µs
µs
µs
s
s
s
s
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