BLF202 NXP Semiconductors, BLF202 Datasheet - Page 10

BLF202

Manufacturer Part Number
BLF202
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF202

Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
1A
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
175MHz
Package Type
CDIP SMD
Pin Count
8
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
5700mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / Rohs Status
Compliant

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Manufacturer
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Price
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Philips Semiconductors
MOUNTING RECOMMENDATIONS
Both the metallized ground plate and the device leads contribute to the heat flow. It is recommended that the transistor
be mounted on a grounded metallized area of the printed-circuit board. This area should be of maximum 0.8 mm
thickness and include at least 12 x 0.5 diameter through metallized holes filled with solder.
A thermal resistance R
on the printed-circuit board.
2003 Sep 19
handbook, full pagewidth
HF/VHF power MOS transistor
Dimensions in mm.
th(mb-h)
of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
7.38
3.60
Fig.15 Footprint SOT409A.
1.87 (2 )
10
4.60
1.00 (9 )
0.60 (4 )
MGK390
0.80 (2 )
1.00 (8 )
0.50 (12 )
Product specification
BLF202

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