BSH103 NXP Semiconductors, BSH103 Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BSH103

Manufacturer Part Number
BSH103
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Product specification
Supersedes data of 1998 Jan 30
File under Discrete Semiconductors, SC13b
andbook, halfpage
DATA SHEET
BSH103
N-channel enhancement mode
MOS transistor
DISCRETE SEMICONDUCTORS
M3D088
1998 Feb 11

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BSH103 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b M3D088 1998 Feb 11 ...

Page 2

... Top view Fig.1 Simplified outline and symbol. CONDITIONS CAUTION 2 Product specification BSH103 DESCRIPTION gate source drain MAM273 MIN. MAX. UNIT 0.85 A 0.5 0.5 W ...

Page 3

... 0.01; T (1) R DSon (2) Pulsed. 3 Product specification MIN. MAX 0.85 3.4 0.5 0.75 0.54 55 +150 55 +150 0 limitation. Fig.3 SOAR. BSH103 UNIT MBK502 ( ...

Page 4

... R th j-s (K/ 0.75 10 0.5 0.33 0.2 0.1 10 0.05 0.02 0. Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values. 1998 Feb 11 PARAMETER Product specification BSH103 VALUE 140 MBK503 (s) UNIT K/W 1 ...

Page 5

... 0 gen 0 gen 0 0.5 A; di/dt = 100 Product specification BSH103 MIN. TYP. MAX. UNIT 30 V 0.4 V 100 nA 100 nA 0.4 0.5 0 2100 670 pC 2 ...

Page 6

... Product specification d(off off 4 (1)(2) (3)(4) ( 300 ( ( 7 5 4 Output characteristics; typical values. BSH103 MBK505 (6) (7) ( ...

Page 7

... Capacitance as a function of drain-source voltage; typical values (1) (2) (3) (4) (5) ( 300 0 0. 0. gate-source voltage; typical values. BSH103 MBK504 C iss C oss C rss (V) MBK509 ( ...

Page 8

... Fig.13 Temperature coefficient of drain-source 8 Product specification 1.6 (1) k (2) 1.2 0 DSon j DSon ---------------------------------------- - ( 2 DSon DSon GS on-resistance as a function of junction temperature; typical values. BSH103 MBK511 135 185 0.5 mA 0.5 mA. D ...

Page 9

... OUTLINE VERSION IEC SOT23 1998 Feb scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES JEDEC EIAJ 9 Product specification detail 0.45 0.55 0.2 0.1 0.15 0.45 EUROPEAN PROJECTION BSH103 SOT23 ISSUE DATE 97-02-28 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Feb 11 10 Product specification BSH103 ...

Page 11

... Philips Semiconductors N-channel enhancement mode MOS transistor 1998 Feb 11 NOTES 11 Product specification BSH103 ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, ...

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