BSH103 NXP Semiconductors, BSH103 Datasheet - Page 8

• Manufacturer Part Number: BSH103
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1998 Feb 11
handbook, halfpage
N-channel enhancement mode
MOS transistor
Fig.12 Temperature coefficient of gate-source
k
=
k
1.2
0.8
0.4
------------------------------------- -
V
0
GSth
V
65
GSth
threshold voltage as a function of junction
temperature; typical values.
at 25 C
at T
j
15
.
35
V
GSth
at V
DS
85
= V
GS
; I
135
D
= 1 mA.
T j ( C)
MBK510
185
8
handbook, halfpage
Fig.13 Temperature coefficient of drain-source
k
=
k
1.6
1.2
0.8
0.4
---------------------------------------- -
R
0
DSon
R
65
DSon
on-resistance as a function of junction
temperature; typical values.
at 25 C
at T
15
j
.
(1) R
(2) R
35
DSon
DSon
at V
at V
85
GS
GS
Product specification
= 4.5 V; I
= 2.5 V; I
(1)
(2)
135
T j ( C)
BSH103
MBK511
D
D
= 0.5 mA.
= 0.5 mA.
185