BSH103 NXP Semiconductors, BSH103 Datasheet - Page 6

• Manufacturer Part Number: BSH103
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

handbook, full pagewidth
Philips Semiconductors
1998 Feb 11
handbook, halfpage
V GS
(V)
N-channel enhancement mode
MOS transistor
V
(1) V
(2) V
Fig.6
5
4
3
2
1
0
DD
= 15 V; I
DS
GS.
.
Gate-source and drain-source voltages as
functions of total gate charge; typical values.
(1)
D
= 0.5 A; T
V in
amb
= 25 C.
Fig.5 Switching times test circuit with input and output waveforms.
V DD
(2)
R L
V out
Q G (pC)
MBK507
MAM274
16
14
12
10
8
6
4
2
0
V out
V in
V DS
(V)
0
0
6
handbook, halfpage
t d(on)
10 %
T
(1) V
(2) V
(3) V
(4) V
t on
amb
90 %
Fig.7
(A)
I D
= 25 C; t
90 %
t f
GS
GS
GS
GS
4
3
2
1
0
0
= 7.5 V.
= 5.5 V.
= 4.5 V.
= 3.5 V.
(1)(2) (3)(4)
10 %
Output characteristics; typical values.
p
= 300 s;
2
(5)
= 0.
4
t d(off)
t off
6
(5) V
(6) V
(7) V
(8) V
(9) V
t r
Product specification
GS
GS
GS
GS
GS
8
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
V DS (V)
BSH103
MBK505
(6)
(7)
(8)
(9)
10