PSMN2R5-30YL NXP Semiconductors, PSMN2R5-30YL Datasheet
PSMN2R5-30YL
Available stocks
Related parts for PSMN2R5-30YL
PSMN2R5-30YL Summary of contents
Page 1
... PSMN2R5-30YL N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK Rev. 04 — 10 March 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. ...
Page 2
... T pulsed ° ° j(init) ≤ Ω; unclamped V sup GS All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL Graphic symbol mbb076 Version Min Max - kΩ ...
Page 3
... N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK 003aac656 P 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 100 μ 100 ms ...
Page 4
... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R5-30YL Product data sheet N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL Min Typ Max - - 1.4 003aac657 t p δ ...
Page 5
... DS see Figure MHz °C; see Figure 0.5 Ω 4 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL Min Typ Max Unit 1.3 1.7 2. 2.45 V ...
Page 6
... R DSon (mΩ (A) D Fig 8. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL Min Typ - 0. 003aac653 10 V (V) = 3 ...
Page 7
... GS Fig 10. Drain-source on-state resistance as a function 003aab271 typ max Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL 4 R DSon (mΩ gate-source voltage; typical values 3 V ...
Page 8
... Fig 14. Gate charge waveform definitions 003aac662 5000 C (pF) 4000 (V) DS 3000 2000 1000 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL GS(pl) V GS(th GS1 GS2 ...
Page 9
... Product data sheet N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK 100 150 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL 003aac652 25 °C 0.8 1.0 V (V) SD © NXP B.V. 2011. All rights reserved ...
Page 10
... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
Page 11
... N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL Supersedes PSMN2R5-30YL v.3 PSMN2R5-30YL v.2 © NXP B.V. 2011. All rights reserved ...
Page 12
... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL © NXP B.V. 2011. All rights reserved ...
Page 13
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 10 March 2011 PSMN2R5-30YL Trademarks © NXP B.V. 2011. All rights reserved ...
Page 14
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 10 March 2011 Document identifier: PSMN2R5-30YL ...