PSMN2R5-30YL NXP Semiconductors, PSMN2R5-30YL Datasheet - Page 6

• Manufacturer Part Number: PSMN2R5-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN2R5-30YL
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
140
120
100
(S)
g
I
80
60
40
20
D
80
60
40
fs
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
20
1
T
j
= 150 °C
…continued
40
2
25 °C
60
3
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
V
DS
003aac651
003aac655
I
= 25 A; V
= 20 A; dI
GS
D
(A)
Figure 17
= 20 V
(V)
80
Rev. 04 — 10 March 2011
4
GS
S
/dt = -100 A/µs; V
= 0 V; T
N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK
Fig 6.
Fig 8.
j
= 25 °C;
(A)
I
D
R
(mΩ)
160
140
120
100
DSon
80
60
40
20
9
7
5
3
1
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
GS
0
0
10
= 0 V;
4.5
2
50
PSMN2R5-30YL
4
V
GS
Min
-
-
-
(V) = 3.2
6
V
100
GS
Typ
0.79
39
38
(V) = 3.2
© NXP B.V. 2011. All rights reserved.
I
8
D
003aac653
003aac658
2.8
2.6
2.4
2.2
V
(A)
3
DS
4.5
10
Max
1.2
-
-
(V)
150
10
Unit
V
ns
nC
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