PSMN2R5-30YL NXP Semiconductors, PSMN2R5-30YL Datasheet - Page 7

• Manufacturer Part Number: PSMN2R5-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN2R5-30YL
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
10
10
10
10
10
10
6000
4000
2000
(A)
(pF)
I
D
C
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
0
C
2
C
iss
rss
min
1
4
6
typ
2
V
8
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GS
003aac661
003aab271
V
max
GS
(V)
(V)
10
Rev. 04 — 10 March 2011
3
N-channel 30 V 2.4 mΩ logic level MOSFET in LFPAK
Fig 10. Drain-source on-state resistance as a function
Fig 12. Gate-source threshold voltage as a function of
V
R
(mΩ)
GS (th)
(V)
DSon
4
3
2
1
3
2
1
0
-60
of gate-source voltage; typical values
junction temperature
2
4
0
PSMN2R5-30YL
max
typ
min
60
6
120
8
© NXP B.V. 2011. All rights reserved.
V
003aac654
003a a c337
T
GS
j
(°C)
(V)
180
10
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