BLF6G15L-250PBRN NXP Semiconductors, BLF6G15L-250PBRN Datasheet

250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz

BLF6G15L-250PBRN

Manufacturer Part Number
BLF6G15L-250PBRN
Description
250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
CAUTION
1.1 General description
1.2 Features and benefits
250 W LDMOS power transistor for base station applications at frequencies from
1450 MHz to 1550 MHz.
Table 1.
Typical RF performance at T
[1]
Mode of operation
2C-WCDMA
BLF6G15L-250PBRN
Power LDMOS transistor
Rev. 2 — 3 November 2010
Typical 2C-WCDMA performance at frequencies of 1476 MHz and 1511 MHz, a supply
voltage of 28 V and an I
Easy power control
Integrated ESD protection
Enhanced ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1450 MHz to 1550 MHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Integrated current sense
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Average output power = 60 W
Power gain = 18.5 dB
Efficiency = 33.0 %
ACPR = −32 dBc
Typical performance
case
Dq
f
(MHz)
1476 to 1511
= 25
of 1410 mA:
°
C in a class-AB production test circuit.
V
(V)
28
DS
P
(W)
60
L(AV)
G
(dB)
18.5
p
Product data sheet
η
(%)
33.0
D
ACPR
(dBc)
−32
[1]

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BLF6G15L-250PBRN Summary of contents

Page 1

... BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical RF performance at T Mode of operation 2C-WCDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier. ...

Page 2

... Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics thermal resistance from junction to case T All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor Simplified outline Graphic symbol ...

Page 3

... MHz; RF performance ° C; unless otherwise specified in a class-AB production test circuit. Conditions output peak-to-average P L(AV) ratio probability on CCDF All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor Conditions 1 180 mA DS ...

Page 4

... DPCH 1410 mA Dq Marking code 7.1 Ruggedness in class-AB operation The BLF6G15L-250PBRN is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1410 mA 7.2 Impedance information Table 11 950 mA; main transistor V Dq ...

Page 5

... G p ( 150 200 250 P (W) L Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor 18 ( (dB) 14 (2) ( 100 150 ( 1475 MHz ( 1493 MHz ( 1511 MHz Input return loss as a function of output power ...

Page 6

... P ( 1475 MHz ( 1493 MHz ( 1511 MHz Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor (3) ACPR (1) (2) ACPR (3) (1) (2) (2) (1) (3) PAR 40 80 120 P IS-95: PAR = 9 ...

Page 7

... ACPR (dBc) (2) 40 (1) 30 ( 120 P (W) L Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor (1) (2) 40 (3) (3) ( 3GPP: Test Model 1; 64 DPCH; PAR = 7 0.01 % probability per carrier ...

Page 8

... C7 C15 C13 C10 C14 C16 C2 = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 μm. r All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor + C12 C5 C3 C11 NXP BLF6G15L-250BPRN Output Rev 03 C4 © NXP B.V. 2010. All rights reserved. ...

Page 9

... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor (2) ...

Page 10

... IS-95 LDMOS LDMOST PAR RF VSWR W-CDMA 11. Revision history Table 14. Revision history Document ID BLF6G15L-250PBRN v.2 BLF6G15L-250PBRN v.1 BLF6G15L-250PBRN Product data sheet Abbreviations Description Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Dedicated Physical CHannel Global System for Mobile communications ...

Page 11

... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 12

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G15L-250PBRN All rights reserved. Date of release: 3 November 2010 ...

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