BLF6G15L-40BRN,112 NXP Semiconductors, BLF6G15L-40BRN,112 Datasheet
BLF6G15L-40BRN,112
Specifications of BLF6G15L-40BRN,112
Related parts for BLF6G15L-40BRN,112
BLF6G15L-40BRN,112 Summary of contents
Page 1
... BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP test model 1, 64 DPCH; PAR = 7 probability of 0.01% on CCDF carrier; ...
Page 2
... Conditions drain-source voltage gate-source voltage sense gate-source voltage drain current storage temperature junction temperature Thermal characteristics thermal resistance from junction to case T All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor Simplified outline Graphic symbol [ ...
Page 3
... Class-AB production test circuit; PAR 7 0.01 % probability on CCDF; 3GPP test model 1; 64 DPCH; f unless otherwise specified. Symbol Parameter PAR O 7.1 Ruggedness in class-AB operation The BLF6G15L-40BRN is capable of withstanding a load mismatch corresponding to VSWR = 10 :1 through all phases under the following conditions 330 mA BLF6G15L-40BRN Product data sheet Characteristics C per section ...
Page 4
... Power gain and drain efficiency as function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor [ (Ω) 4.6 − j4.5 4.6 − j4.5 drain Z L 001aaf059 ...
Page 5
... D 40 (5) ( (W) L Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor 15 ACPR (dBc) (1) 25 (2) ( 3GPP, test model 1; 64 DPCH, PAR = 7 0.01 % probability per carrier. 5 MHz carrier spacing. ( 1475 MHz ( 1493 MHz ( 1511 MHz Adjacent channel power ratio as a function of load power ...
Page 6
... All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor C13 + C6 C5 C10 C11 C12 ...
Page 7
... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor ( 3.00 3.30 1 ...
Page 8
... CCDF LDMOS PAR DPCH RF VSWR W-CDMA 11. Revision history Table 12. Revision history Document ID Release date BLF6G15L-40BRN v.2 20101112 Modifications: BLF6G15L-40BRN v.1 20100914 BLF6G15L-40BRN Product data sheet Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio ...
Page 9
... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
Page 10
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 12 November 2010 BLF6G15L-40BRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
Page 11
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G15L-40BRN All rights reserved. Date of release: 12 November 2010 ...