BLF6G15L-40BRN,112 NXP Semiconductors, BLF6G15L-40BRN,112 Datasheet - Page 5

• Manufacturer Part Number: BLF6G15L-40BRN,112
• Description: TRANS LDMOS SOT1112A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G15L-40BRN,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: *
• Gain: 22dB
• Current Rating: 11A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 2.5W
• Package / Case: *
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 11 A
• Maximum Operating Temperature: + 200 C
• Forward Transconductance Gfs (max / Min): 4.3 S
• Resistance Drain-source Rds (on): 0.25 Ohms
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Details

NXP Semiconductors
BLF6G15L-40BRN
Product data sheet
Fig 3.
(dB)
G
p
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
24.0
23.0
22.0
21.0
20.0
19.0
0
3GPP, test model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier. 5 MHz carrier spacing.
Power gain and drain efficiency as function of
load power; typical values
7.3.2 2C-WCDMA (5 MHz spacing)
10
(1)
(2)
(3)
G
D
p
20
(4)
(5)
(6)
P
All information provided in this document is subject to legal disclaimers.
L
001aan081
(W)
Rev. 2 — 12 November 2010
30
50
40
30
20
10
0
(%)
D
Fig 4.
ACPR
(dBc)
(1) f = 1475 MHz
(2) f = 1493 MHz
(3) f = 1511 MHz
15
25
35
45
55
0
3GPP, test model 1; 64 DPCH, PAR = 7.5 dB at
0.01 % probability per carrier. 5 MHz carrier spacing.
Adjacent channel power ratio as a function of
load power; typical values
BLF6G15L-40BRN
10
Power LDMOS transistor
20
(1)
(2)
(3)
© NXP B.V. 2010. All rights reserved.
P
ACPR
ACPR
L
001aan082
(W)
(1)
(2)
(3)
10M
5M
30
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