BLF6G15L-250PBRN:1 NXP Semiconductors, BLF6G15L-250PBRN:1 Datasheet
BLF6G15L-250PBRN:1
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BLF6G15L-250PBRN:1 Summary of contents
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... BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical RF performance at T Mode of operation 2C-WCDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier. ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage drain current storage temperature junction temperature Thermal characteristics thermal resistance from junction to case T All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor Simplified outline Graphic symbol ...
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... PAR performance = 1510.9 MHz; RF performance ° C; unless otherwise specified in a class-AB production test circuit. Conditions output peak-to-average P L(AV) ratio probability on CCDF All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor Conditions 1 180 sense transistor 20.1 mA ...
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... Mode of operation: 2-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model 1; 64 DPCH 1410 mA Dq Marking code 7.1 Ruggedness in class-AB operation The BLF6G15L-250PBRN is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1410 mA 7.2 Impedance information Table 11 950 mA; main transistor ...
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... G p ( 150 200 250 P (W) L Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor 18 ( (dB) 14 (2) ( 100 150 ( 1475 MHz ( 1493 MHz ( 1511 MHz Input return loss as a function of output power; typical values ...
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... P ( 1475 MHz ( 1493 MHz ( 1511 MHz Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor (3) ACPR (1) (2) ACPR (3) (1) (2) (2) (1) (3) PAR 40 80 120 P IS-95: PAR = 9 0.01 % probability of the CCDF. ...
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... ACPR (dBc) (2) 40 (1) 30 ( 120 P (W) L Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor (1) (2) 40 (3) (3) ( 3GPP: Test Model 1; 64 DPCH; PAR = 7 0.01 % probability per carrier; 5 MHz carrier spacing. ( 1475 MHz ...
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... C16 C2 = 3.5 F/m; thickness = 0.762 mm; thickness copper plating = 35 μm. r All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor + C12 C5 C3 C11 NXP BLF6G15L-250BPRN Output Rev 03 C4 © NXP B.V. 2010. All rights reserved. C6 014aab104 ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor ( ...
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... IS-95 LDMOS LDMOST PAR RF VSWR W-CDMA 11. Revision history Table 14. Revision history Document ID BLF6G15L-250PBRN v.2 BLF6G15L-250PBRN v.1 BLF6G15L-250PBRN Product data sheet Abbreviations Description Complementary Cumulative Distribution Function Code Division Multiple Access Continuous Wave Enhanced Data rates for GSM Evolution Dedicated Physical CHannel ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 3 November 2010 BLF6G15L-250PBRN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G15L-250PBRN All rights reserved. Date of release: 3 November 2010 ...