BLF6G15L-250PBRN:1 NXP Semiconductors, BLF6G15L-250PBRN:1 Datasheet - Page 4

• Manufacturer Part Number: BLF6G15L-250PBRN:1
• Description: BLF6G15L-250PBRN/ACC-8L/REEL13
• Manufacturer: NXP Semiconductors

Specifications of BLF6G15L-250PBRN:1

• Voltage - Rated: 65V
• Transistor Type: LDMOS
• Frequency: *
• Gain: 18.5dB
• Current Rating: 64A
• Current - Test: *
• Voltage - Test: 28V
• Power - Output: 60W
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLF6G15L-250PBRN
Product data sheet
7.1 Ruggedness in class-AB operation
7.2 Impedance information
Table 9.
Off state S
Table 10.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF;
3GPP test model 1; 64 DPCH; f
I
The BLF6G15L-250PBRN is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Table 11.
I
[1]
Marking code
1
2
3
Marking code
BT
BU
BW
BX
f
(MHz)
1480
1510
Dq
Dq
Dq
Fig 1.
= 1410 mA
= 950 mA; main transistor V
= 1410 mA; P
Z
S
and Z
11
Definition of transistor impedance
Phase binning
Gain binning
Typical impedance per section
L
measurement; V
defined in
All information provided in this document is subject to legal disclaimers.
L
= 200 W; f = 1475 MHz.
Figure
Rev. 2 — 3 November 2010
1.
DS
DS
1
= 28 V; V
= 1473.4 MHz, f
Input Resonance Frequency (GHz)
Min
1.85
1.89
1.93
Gain at a center frequency of 1475.9 MHz in dB
Min
17.0
17.5
18.0
18.5
Z
(Ω)
1.1 − j2.8
1.3 − j2.8
= 28 V
S
[1]
gate
GS
Z
S
= 0 V
2
BLF6G15L-250PBRN
= 1478.4 MHz; P
001aaf059
Z
drain
L
Max
1.89
1.93
1.97
Max
17.5
18.0
18.5
19.0
Z
(Ω)
2.3 − j3.2
2.1 − j2.8
L(AV)
L
[1]
Power LDMOS transistor
= 60 W; V
DS
= 28 V;
© NXP B.V. 2010. All rights reserved.
DS
= 28 V;
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