BLF888AS NXP Semiconductors, BLF888AS Datasheet
BLF888AS
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BLF888AS Summary of contents
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... BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 — 30 August 2011 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance unless otherwise specified ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF888A (SOT539A BLF888AS (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF888A BLF888AS 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor Conditions = 80 125 W case L(AV) Conditions Min Typ Max Unit ...
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... PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9 0.01 % probability on CCDF. Fig 1. 6.1 Ruggedness in class-AB operation The BLF888A and BLF888AS are capable of withstanding a load mismatch corresponding to VSWR through all phases under the following conditions 860 MHz at rated power. BLF888A_BLF888AS ...
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... Product data sheet 001aan761 60 η D (%) 300 400 500 P (W) L(AV) Fig 3. All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor (dB) 20 IMD3 100 200 300 1.3 A; measured in a common source ...
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... IMD shldr (dBc) −20 −30 −40 −50 700 800 900 f (MHz) = 1.3 A; measured Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor 12 PAR (dB) 10 PAR 8 6 η 100 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor drain drain 2 001aan207 = 50 V and P = 110 W (DVB-T). DS ...
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... BLF888A; BLF888AS electromigration (I All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor 001aam586 (1) (2) (3) (4) (5) ( ...
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... F/m; height = 0.762 mm; Cu (top/bottom metallization); r All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor Remarks UT-090C-25 (EZ 90-25) [1] [1] [2] [2] [2] [3] [2] Kemet C1210X475K5RAC-TU or capacitor of same quality. ...
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G1(test C36 R3 C34 L32 L31 50 Ω C32 C33 L33 B2 C31 R4 C35 C37 G2(test) See Table 9 for a list of components. Fig 10. Class-AB common source broadband amplifier; V C19 ...
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... G1(test) R1 C17 R7 C19 C1 C3 C30 C31 C20 C18 G2(test) 6.3 mm All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor 49 D1(test) + C23 - C21 C11 C10 C13 C4 C6 ...
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... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor ...
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... Table 7 on page 3: The values in the Conditions column for V removed. Preliminary data sheet Objective data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor Change notice Supersedes - BLF888A_BLF888AS v.2 and I have been ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 30 August 2011 BLF888A; BLF888AS UHF power LDMOS transistor © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF888A_BLF888AS All rights reserved. Date of release: 30 August 2011 ...