BLF888AS NXP Semiconductors, BLF888AS Datasheet - Page 14

• Manufacturer Part Number: BLF888AS
• Description: A 600W LDMOS RF power transistor for DVB-T applications optimised to give most rugged performance with no compromise in broadband efficiency and gain
• Manufacturer: NXP Semiconductors

NXP Semiconductors
10. Handling information
11. Abbreviations
12. Revision history
Table 11.
BLF888A_BLF888AS
Product data sheet
CAUTION
Document ID
BLF888A_BLF888AS v.3
Modifications:
BLF888A_BLF888AS v.2
BLF888A_BLF888AS v.1
Revision history
Table 10.
Acronym
CCDF
DVB
DVB-T
LDMOS
LDMOST
OFDM
PAR
RF
SMD
UHF
VSWR
Release date
20110830
20110301
20100921
•
•
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
The status of this document has been changed to Product data sheet.
Table 7 on page
removed.
Abbreviations
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Preliminary data sheet
Objective data sheet
3: The values in the Conditions column for V
Rev. 3 — 30 August 2011
Description
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Peak-to-Average power Ratio
Radio Frequency
Surface Mounted Device
Ultra High Frequency
Voltage Standing-Wave Ratio
Change notice
-
-
-
BLF888A; BLF888AS
UHF power LDMOS transistor
Supersedes
BLF888A_BLF888AS v.2
BLF888A_BLF888AS v.1
-
DS
and I
Dq
© NXP B.V. 2011. All rights reserved.
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