BLF888AS NXP Semiconductors, BLF888AS Datasheet - Page 6

• Manufacturer Part Number: BLF888AS
• Description: A 600W LDMOS RF power transistor for DVB-T applications optimised to give most rugged performance with no compromise in broadband efficiency and gain
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF888A_BLF888AS
Product data sheet
Fig 4.
Fig 6.
(dB)
(dB)
G
G
p
p
24
22
20
18
16
14
12
24
20
16
12
8
400
0
V
narrowband 860 MHz test circuit.
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
P
common source broadband test circuit as described in
Section
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
DS
L(AV)
= 50 V; I
IMD
50
= 110 W; V
7.1.2 DVB-T
7.2.1 DVB-T
500
G
8.
shldr
7.2 Broadband RF figures
p
100
Dq
= 1.3 A; measured in a common source
IMD
600
DS
150
G
= 50 V; I
shldr
p
200
700
Dq
250
= 1.3 A; measured in a
P
800
All information provided in this document is subject to legal disclaimers.
L(AV)
001aam582
001aam585
300
f (MHz)
(W)
350
900
Rev. 3 — 30 August 2011
IMD
0
−10
−20
−30
−40
−50
−60
−10
−20
−30
−40
−50
IMD
(dBc)
(dBc)
shldr
shldr
Fig 5.
Fig 7.
PAR
(dB)
PAR
(dB)
9.5
8.5
7.5
6.5
5.5
12
10
8
6
4
2
0
400
0
V
narrowband 860 MHz test circuit.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
P
common source broadband test circuit as described in
Section
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
DS
L(AV)
BLF888A; BLF888AS
= 50 V; I
50
= 110 W; V
500
8.
PAR
η
D
100
Dq
= 1.3 A; measured in a common source
600
DS
150
UHF power LDMOS transistor
= 50 V; I
PAR
η
200
D
700
Dq
250
= 1.3 A; measured in a
800
© NXP B.V. 2011. All rights reserved.
P
001aam583
001aam584
L(AV)
300
f (MHz)
(W)
350
900
60
50
40
30
20
10
0
50
40
30
20
10
(%)
(%)
η
η
D
D
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