BF1214 NXP Semiconductors, BF1214 Datasheet
BF1214
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BF1214 Summary of contents
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... Rev. 01 — 30 October 2007 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges ...
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... MHz - [ 400 MHz S(opt 800 MHz S(opt) [3] input level for 102 40 dB AGC MHz MHz unw - Simplified outline BF1214 Typ Max Unit - 180 2.2 2 0.9 1.5 dB 1.2 1.8 dB 105 - ...
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... Dual N-channel dual gate MOSFET Description * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Conditions Min Max [1] T 107 C - 180 sp 65 +150 - 150 001aac193 100 150 200 T (˚C) sp © NXP B.V. 2007. All rights reserved. BF1214 Unit ...
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... DS(B) G1( G2-S DS(A) DS(B) amplifi G1-S(A) amplifi G1-S( G2-S DS(A) DS( G1-S(A) G1-S(B) Rev. 01 — 30 October 2007 BF1214 Dual N-channel dual gate MOSFET Typ Unit 240 K/W Min Typ Max Unit 0.5 - 1.5 0.5 - 1.5 0.3 - 1.0 0 ...
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... Dual N-channel dual gate MOSFET Min 27 [1] - [1] - [1] - [ L(opt L(opt 102 BF1214 Typ Max Unit 2.2 2 0.9 1.5 dB 1.2 1.8 ...
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... V ( Fig 3. Output characteristics; typical values Rev. 01 — 30 October 2007 Dual N-channel dual gate MOSFET 001aag994 1.8 V. G1-S = 1.7 V. G1-S = 1.6 V. G1-S = 1.5 V. G1-S = 1.4 V. G1-S = 1.3 V. G1-S = 1.2 V. G1-S = 1.1 V. G1-S = 1 G2-S j © NXP B.V. 2007. All rights reserved. BF1214 (1) (2) (3) (4) (5) (6) (7) (8) ( ...
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... V. G2-S = 3.5 V. G2-S = 3.0 V. G2-S = 2.5 V. G2-S = 2.0 V. G2-S = 1.5 V. G2-S = 1 drain current; typical values G2-S G1 voltage (V ); typical values GG © NXP B.V. 2007. All rights reserved. BF1214 001aag996 (1) ( (mA) D 001aag998 ...
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... Rev. 01 — 30 October 2007 Dual N-channel dual gate MOSFET (connected typical values BF1214 001aah000 (1) (2) (3) (4) ( (V) G2 © NXP B.V. 2007. All rights reserved ...
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... MHz MHz; G1(A) w unw mA see D(nom)(A) amb cross modulation as a function of gain reduction; typical values 001aah003 40 50 gain reduction (dB mA see D(nom)(A) amb © NXP B.V. 2007. All rights reserved. BF1214 001aah002 40 50 Figure 24. Figure 24 ...
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... DS( mA. D(A) phase as a function of frequency; typical values (MHz DS(A) G2-S DS( mA. D(A) frequency; typical values BF1214 001aah005 (deg 001aah007 3 10 © NXP B.V. 2007. All rights reserved ...
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... C; typical values. amb opt (ratio) 0.76 0.71 Rev. 01 — 30 October 2007 BF1214 Dual N-channel dual gate MOSFET = 25 C; typical values Angle Magnitude (deg) (ratio) 88.01 0.9902 85.54 0.9918 80.05 0.9910 75.66 0.9896 71.57 0.9881 67.10 0.9859 63.38 0.9836 59 ...
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... MHz MHz; G1(B) w unw mA see D(nom)(B) amb cross modulation as a function of gain reduction; typical values 001aah010 40 50 gain reduction (dB MHz see w amb © NXP B.V. 2007. All rights reserved. BF1214 001aah009 40 50 Figure 24. Figure 24 ...
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... DS( mA. D(B) phase as a function of frequency; typical values (MHz DS(B) G2-S DS( mA. D(B) frequency; typical values BF1214 001aah012 (deg 001aah014 3 10 © NXP B.V. 2007. All rights reserved ...
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... C; typical values. amb Angle Magnitude (deg) (ratio) 89.71 0.9897 92.19 0.9920 88.94 0.9914 87.64 0.9902 86.52 0.9889 85.29 0.9869 84.60 0.9845 83.78 0.9818 82.86 0.9786 81.97 0.9750 80.62 0.9717 r (ratio) n (deg) 22.58 0.690 47.34 0.620 DUT C4 4 001aad926 BF1214 Angle (deg) 0.98 2.79 5.62 8.42 11.21 14.01 16.81 19.64 22.44 25.22 28.10 © NXP B.V. 2007. All rights reserved ...
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... 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 Rev. 01 — 30 October 2007 Dual N-channel dual gate MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION BF1214 SOT363 ISSUE DATE 04-11-08 06-03-16 © NXP B.V. 2007. All rights reserved ...
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... Description Automatic Gain Control Direct Current Metal-Oxide-Semiconductor Field-Effect Transistor Ultra High Frequency Very High Frequency Data sheet status Product data sheet Rev. 01 — 30 October 2007 BF1214 Dual N-channel dual gate MOSFET Change notice Supersedes - - © NXP B.V. 2007. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 30 October 2007 BF1214 Dual N-channel dual gate MOSFET © NXP B.V. 2007. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF1214 All rights reserved. Date of release: 30 October 2007 Document identifier: BF1214_1 ...