BF1214 NXP Semiconductors, BF1214 Datasheet - Page 11

• Manufacturer Part Number: BF1214
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 9.
V
Table 10.
V
BF1214_1
Product data sheet
f (MHz)
40
100
200
300
400
500
600
700
800
900
1000
f (MHz)
400
800
DS(A)
DS(A)
= 5 V; V
= 5 V; V
s
Magnitude
(ratio)
0.9877
0.9888
0.9852
0.9766
0.9643
0.9504
0.9339
0.9151
0.8960
0.8766
0.8564
Scattering parameters for amplifier A
Noise data for amplifier A
11
G2-S
G2-S
8.2.1 Scattering parameters for amplifier A
8.2.2 Noise data for amplifier A
= 4 V; I
= 4 V; I
NF
0.91
1.23
D(A)
D(A)
min
Angle
(deg)
3.07
7.81
15.61
23.41
31.14
38.62
45.96
53.13
60.18
67.00
73.58
= 18 mA; V
= 18 mA; T
(dB)
s
Magnitude
(ratio)
3.07
3.07
3.04
3.00
2.95
2.89
2.82
2.74
2.66
2.57
2.49
21
DS(B)
amb
= 25 C; typical values.
= 0 V; V
Rev. 01 — 30 October 2007
(ratio)
0.76
0.71
opt
G1-S(B)
Angle
(deg)
176.73
171.67
163.23
154.91
146.63
138.57
130.61
122.79
115.17
107.66
100.35
= 0 V; T
s
Magnitude
(ratio)
0.0006
0.0012
0.0022
0.0033
0.0042
0.0050
0.0056
0.0061
0.0064
0.0065
0.0066
12
amb
= 25 C; typical values.
(deg)
23.60
48.91
Dual N-channel dual gate MOSFET
Angle
(deg)
88.01
85.54
80.05
75.66
71.57
67.10
63.38
59.74
56.44
53.53
50.29
s
Magnitude
(ratio)
0.9902
0.9918
0.9910
0.9896
0.9881
0.9859
0.9836
0.9813
0.9790
0.9769
0.9753
22
r
0.677
0.620
n
(ratio)
© NXP B.V. 2007. All rights reserved.
BF1214
Angle
(deg)
1.00
2.74
5.50
8.22
10.93
13.61
16.28
18.96
21.60
24.20
26.88
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